How to Combine SHJ Cell-Edge Passivation and Module Reliability?

The use of cut-cells in most of the current modules is now the norm to maximise the final product performances. But the integration of such new cell configurations also comes with new challenges, especially if small cell size dimensions such as shingle are considered. Indeed, specific edge passivation processes are often used to recover for the cut-cell losses. Alumina Oxide or Polymer deposition are the most studied approaches, with in general promising benefits proven at cell level. However, only few communications after module integration are available, in particular about the impact of these additional layers on final module reliability. We show for example that it is crucial to avoid direct deposition of AlOX over the cell metal pattern in the future interconnection area, as TC (Thermal Cycling) resilience of such modules is clearly degraded. Proper edge localization of the AlOX layer is needed to recover the initial reliability behaviour. To preserve the interconnection quality, three different approaches are investigated: (1) edge localisation of the layer by wafer stacking during deposition (2) introduction of adapted copper plating solutions allowing metal growth through the passivation layer (3) edge passivation process directly applied on final strings just before lamination.

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Publication Details

Journal
SiliconPV Conference Proceedings
Published
2024-12-06
DOI
https://doi.org/10.52825/siliconpv.v2i.1292
Citations
1
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
0.21

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article

How to Combine SHJ Cell-Edge Passivation and Module Reliability?

Benoît Martel, Nicola Frasson, Agata Lachowicz, Marco Galiazzo et al.
1 citations
SiliconPV Conference Proceedings
Silicon and Solar Cell Technologies
0.21
article

How to Combine SHJ Cell-Edge Passivation and Module Reliability?

Benoît Martel, Nicola Frasson, Agata Lachowicz, Marco Galiazzo, Vincent Barth, Mickaël Albaric, Samuel Harrison
article en
1 citations

Abstract

The use of cut-cells in most of the current modules is now the norm to maximise the final product performances. But the integration of such new cell configurations also comes with new challenges, especially if small cell size dimensions such as shingle are considered. Indeed, specific edge passivation processes are often used to recover for the cut-cell losses. Alumina Oxide or Polymer deposition are the most studied approaches, with in general promising benefits proven at cell level. However, only few communications after module integration are available, in particular about the impact of these additional layers on final module reliability. We show for example that it is crucial to avoid direct deposition of AlOX over the cell metal pattern in the future interconnection area, as TC (Thermal Cycling) resilience of such modules is clearly degraded. Proper edge localization of the AlOX layer is needed to recover the initial reliability behaviour. To preserve the interconnection quality, three different approaches are investigated: (1) edge localisation of the layer by wafer stacking during deposition (2) introduction of adapted copper plating solutions allowing metal growth through the passivation layer (3) edge passivation process directly applied on final strings just before lamination.

SiliconPV Conference ProceedingsVol. 2
Swiss Center for Electronics and Microtechnology (Switzerland) (CH), BAE Systems (Sweden) (SE), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux (FR)
European Commission, H2020 European Institute of Innovation and Technology
Openalex Percentile: Top 45%
Silicon and Solar Cell Technologies
0.21
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