A Non-destructive Short Circuit Withstand Time Screening Methodology for Commercially Available SiC Power MOSFET
This work presents a novel non-destructive methodology to screen out devices with lower short circuit withstand time (SCWT) in commercial $4 \mathrm{H}-\mathrm{SiC}$ power metal-oxide semiconductor field effect transistors (MOSFETs) featuring a planar gate structure. The proposed screening process can effectively identify and remove devices with lower SCWT from a batch of devices with the same lot number without degrading the performance of the reliable ones.
Authors
- Nikhil Bhardwaj
- Atsushi Shimbori (ORCID: https://orcid.org/0000-0003-3307-2775)
- Michael Jin (ORCID: https://orcid.org/0000-0001-5182-2926)
- Monikuntala Bhattacharya (ORCID: https://orcid.org/0000-0002-0878-0975)
- Hengyu Yu (ORCID: https://orcid.org/0000-0002-3299-8106)
- Anant Agarwal (ORCID: https://orcid.org/0000-0003-0228-8039)
- Shiva Houshmand (ORCID: https://orcid.org/0000-0003-0779-3595)
- Jiashu Qian
- Limeng Shi
- Marvin H. White
- Aditya Aman
Institutions
- Ford Motor Company (United States) (US)
- Indian Institute of Technology Bombay (IN)
- The Ohio State University (US)
Publication Details
- Published
- 2024-11-04
- DOI
- https://doi.org/10.1109/wipda62103.2024.10773256
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- Ford Motor Company