From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging
This work experimentally investigates the effect of increasing number of levels on the measured converter system efficiency, using a seven-level $\pi$-type GaN power converter for cyclic capacitive load charging/discharging. The work provides insight into the partial power processing mechanism, and estimates further expected efficiency improvement from GaN-based monolithic bidirectional switches (MBDS). This work uses two common-drain connected HEMTs as discrete bidirectional switches (DBDS). Increasing the operation mode from two to seven levels increased the charging power by $600 \%$, but the measured losses only increased by $75 \%$, which improved the $\mathbf{9 9 . 0 \%}$ half-bridge efficiency to over $\mathbf{9 9 . 7 \%}$ multilevel charging efficiency (reducing the relative losses over 4 times).
Authors
- Michael Basler (ORCID: https://orcid.org/0000-0002-4313-3490)
- R. Quay (ORCID: https://orcid.org/0000-0002-3003-0134)
- Richard Reiner (ORCID: https://orcid.org/0000-0002-9529-5109)
- Stefan Mönch (ORCID: https://orcid.org/0000-0002-5095-8781)
- Kilian Bartholomé (ORCID: https://orcid.org/0000-0001-6525-777X)
- Daniel Grieshaber (ORCID: https://orcid.org/0009-0005-3183-1282)
- Adrian Söllner
- Ines Ben Nour
Institutions
- University of Stuttgart (DE)
- Fraunhofer Institute for Applied Solid State Physics (DE)
- Fraunhofer-Gesellschaft (DE)
Publication Details
- Published
- 2024-11-04
- DOI
- https://doi.org/10.1109/wipda62103.2024.10773264
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.31