From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging

This work experimentally investigates the effect of increasing number of levels on the measured converter system efficiency, using a seven-level $\pi$-type GaN power converter for cyclic capacitive load charging/discharging. The work provides insight into the partial power processing mechanism, and estimates further expected efficiency improvement from GaN-based monolithic bidirectional switches (MBDS). This work uses two common-drain connected HEMTs as discrete bidirectional switches (DBDS). Increasing the operation mode from two to seven levels increased the charging power by $600 \%$, but the measured losses only increased by $75 \%$, which improved the $\mathbf{9 9 . 0 \%}$ half-bridge efficiency to over $\mathbf{9 9 . 7 \%}$ multilevel charging efficiency (reducing the relative losses over 4 times).

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Published
2024-11-04
DOI
https://doi.org/10.1109/wipda62103.2024.10773264
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
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article
Field-Weighted Citation Impact
0.31
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article

From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging

Michael Basler, R. Quay, Richard Reiner, Stefan Mönch et al.
1 citations
GaN-based semiconductor devices and materials
0.31
article

From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging

Michael Basler, R. Quay, Richard Reiner, Stefan Mönch, Kilian Bartholomé, Daniel Grieshaber, Adrian Söllner, Ines Ben Nour
article en
1 citations

Abstract

This work experimentally investigates the effect of increasing number of levels on the measured converter system efficiency, using a seven-level $\pi$-type GaN power converter for cyclic capacitive load charging/discharging. The work provides insight into the partial power processing mechanism, and estimates further expected efficiency improvement from GaN-based monolithic bidirectional switches (MBDS). This work uses two common-drain connected HEMTs as discrete bidirectional switches (DBDS). Increasing the operation mode from two to seven levels increased the charging power by $600 \%$, but the measured losses only increased by $75 \%$, which improved the $\mathbf{9 9 . 0 \%}$ half-bridge efficiency to over $\mathbf{9 9 . 7 \%}$ multilevel charging efficiency (reducing the relative losses over 4 times).

University of Stuttgart (DE), Fraunhofer Institute for Applied Solid State Physics (DE), Fraunhofer-Gesellschaft (DE)
Affordable and clean energy
Openalex Percentile: Top 41%
GaN-based semiconductor devices and materials
0.31
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From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging — Michael Basler, R. Quay, et al. · (2024) | TGRS Research Map | TGRS