Comparative Analysis of the Static Performance of Various HEXFET Layout Approaches for 1.2 kV SiC MOSFETs

This study compares the static electrical characteristics of 1.2 kV MOSFETs with different layout approaches fabricated on a 6 -inch $\mathbf{4 H - S i C}$ wafer. Three distinct layout designs - conventional (linear), hexagonal (HEXFET), and elongated HEXFET - were implemented and analyzed, achieving impressive static performance with specific on-resistance ($\mathrm{R}_{\mathrm{on}, \mathrm{sp}}$) $\lt3 \mathbf{m} \Omega^{*} \mathbf{c m}^{2}$ measured on-wafer. Additionally, a novel layout design for SiC power MOSFETs is presented, which removes the P+ body implant from the traditional HEXFET unit cell. The fabricated devices’ measured output, transfer, and blocking performance are compared in this paper, with the proposed and elongated HEXFET demonstrating the potential to reduce the HEXFET’s cell pitch and improve 1.2 kV SiC MOSFET electrical performance. fabricated diodes.