Methodology for Determining Critical Screening Voltage in SiC MOSFETs Through Gate Leakage Current Hysteresis
The study presents a novel method for determining the Critical Screening Voltage (CSV) in SiC MOSFETs using gate leakage current hysteresis. Measurements are conducted at room temperature involving gate voltage sweeps in both directions. The CSV is identified as the gate voltage where downward sweep leakage current surpasses the upward sweep. This approach is applicable to discrete SiC MOSFETs and can be implemented with standard equipment like a parametric analyzer or Source Measurement Unit (SMU).
Authors
- Nikhil Bhardwaj
- Atsushi Shimbori (ORCID: https://orcid.org/0000-0003-3307-2775)
- Michael Jin (ORCID: https://orcid.org/0000-0001-5182-2926)
- Sandeep Anand (ORCID: https://orcid.org/0000-0001-6828-8715)
- Monikuntala Bhattacharya (ORCID: https://orcid.org/0000-0002-0878-0975)
- Hengyu Yu (ORCID: https://orcid.org/0000-0002-3299-8106)
- Anant Agarwal (ORCID: https://orcid.org/0000-0003-0228-8039)
- Shiva Houshmand (ORCID: https://orcid.org/0000-0003-0779-3595)
- Jiashu Qian
- Limeng Shi
- Marvin H. White
Institutions
- Ford Motor Company (United States) (US)
- Indian Institute of Technology Bombay (IN)
- The Ohio State University (US)
Publication Details
- Published
- 2024-11-04
- DOI
- https://doi.org/10.1109/wipda62103.2024.10773284
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Ford Motor Company