Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices

The integration of gallium oxide $\left(\mathrm{Ga}_{2} \mathrm{O}_{3}\right)$ in electronic packaging has gained significant attention in recent research due to its promising properties. Despite this growing interest, the technology remains predominantly at the academic research stage, largely due to a lack of comprehensive data on the packaging process. Die attachment is a crucial factor for establishing functional and reliable semiconductor packages. This study sheds light on various factors that can affect the bonding strength of Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> chips on conventional direct bonded copper (DBC). Several samples were prepared by attaching Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and Si chips onto gold-plated DBCs using various die attachment materials and methods. The bonding strength of each sample was evaluated through shear testing. The results indicated that surface roughness, die attachment method, die attachment material, metallization, and chip size significantly influenced the bonding strength.