Threshold Voltage Adjustment of Commercial SiC MOSFETs During Gate Oxide Screening By Low Field Pulse

This paper aims to introduce an effective way to relieve the large $V_{t h}$ shift from aggressive gate oxide screening on commercial Silicon Carbide (SiC) power MOSFETs. It features a high-voltage gate pulse screening measurement followed by a low-voltage adjustment pulse performed at room temperature. The threshold voltage $V_{t h}$ is measured before the screening pulse ($V_{\text {th-pres }}$) and compared with the final threshold voltage measurement after the adjustment pulse and 48 -hour recovery time $\left(V_{t h-f i n a l}\right)$. The effects of the screening with adjustment pulse technique on threshold voltage, on-resistance, and lifetime are investigated.