Investigation of the Single-Pulse Avalanche Capability of Commercial 1.2kV SiC MOSFETs With Different Structures

To investigate the single-pulse avalanche capability of silicon carbide (SiC) MOSFETs, the latest generation commercial 1.2 kV SiC MOSFETs from three companies (Wolfspeed, Infineon and Rohm) have been tested, featuring four different structures of planar, asymmetric trench, double trench and deep double trench. The results show that the avalanche energy density of the asymmetric trench structure is 1.026 times, 39.36 times and 1.877 times higher than that of the planar, the double trench and the deep double trench structures, respectively. This study may contribute to the design of SiC MOSFETs and the selection of devices for applications with high avalanche reliability requirements.