SiO<sub>2</sub>/ Si<sub>3</sub>N<sub>4</sub> Electret Incorporated AlN Substrates for Partial Discharge Free WBG Power Electronics Operating at Low Pressures

Electrets are dielectric materials capable of generating electric fields without a voltage source. Previous studies have focused on the design, fabrication, and utilization of electrets to counter and neutralize locally concentrated high electric fields and mitigate partial discharge (PD) in power electronics systems. However, the effectiveness of inorganic electrets in mitigating PD in low-pressure conditions has remained unexplored. Here, we present results showing that $\mathrm{SiO}_{2} / \mathrm{Si}_{3} \mathbf{N}_{4}$ thin film electrets exhibit notable efficacy in mitigating PD and increasing partial discharge inception voltage (PDIV) at low pressures. Index Terms- $\mathrm{SiO}_{2} / \mathrm{Si}_{3} \mathbf{N}_{4}$, thin film, electret, partial discharge (PD), low pressure, power electronics, packaging.

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Publication Details

Published
2024-11-04
DOI
https://doi.org/10.1109/wipda62103.2024.10773213
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.62
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article

SiO2/ Si3N4 Electret Incorporated AlN Substrates for Partial Discharge Free WBG Power Electronics Operating at Low Pressures

Chanyeop Park, Asif Muhammad Juberi
2 citations
GaN-based semiconductor devices and materials
0.62
article

SiO2/ Si3N4 Electret Incorporated AlN Substrates for Partial Discharge Free WBG Power Electronics Operating at Low Pressures

Chanyeop Park, Asif Muhammad Juberi
article en
2 citations

Abstract

Electrets are dielectric materials capable of generating electric fields without a voltage source. Previous studies have focused on the design, fabrication, and utilization of electrets to counter and neutralize locally concentrated high electric fields and mitigate partial discharge (PD) in power electronics systems. However, the effectiveness of inorganic electrets in mitigating PD in low-pressure conditions has remained unexplored. Here, we present results showing that $\mathrm{SiO}_{2} / \mathrm{Si}_{3} \mathbf{N}_{4}$ thin film electrets exhibit notable efficacy in mitigating PD and increasing partial discharge inception voltage (PDIV) at low pressures. Index Terms- $\mathrm{SiO}_{2} / \mathrm{Si}_{3} \mathbf{N}_{4}$, thin film, electret, partial discharge (PD), low pressure, power electronics, packaging.

University of Wisconsin–Milwaukee (US), Arizona State University (US)
Affordable and clean energy
Openalex Percentile: Top 31%
GaN-based semiconductor devices and materials
0.62
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