Performance Analysis of a two-stage Ga₂O₃ Voltage Multiplier

Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> devices have the potential to replace SiC and GaN devices in high voltage power electronic applications. While development of Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> devices is in its infancy, a clearer picture on its applications will prove to be useful in the future. This paper provides a performance comparison of a commercially available SiC Schottky diode and a Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Schottky diode, with similar electrical characteristics, fabricated in the authors’ university. The diodes are implemented in a two-stage Half-Wave Cockcroft-Walton Voltage Multiplier (VM) application and tested via SPICE simulations. The behavior of both VMs are evaluated and compared in terms of efficiency, output ripple, and voltage gain.