Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module
Multi-chip power modules may suffer from increased switching losses and severe oscillation issues during switching transients due to e.g. parasitic capacitances and imbalances within the power module. This paper presents the switching performance measured at $7.2 ~\mathrm{kV} / ~200 \mathrm{~A}$ of both high-side and low-side in an 8-chip (4+4) half-bridge power module based on 10 kV SiC MOSFETs in a double pulse test (DPT) setup. The demonstrated power module obtains almost a doubling of the current per chip ratio compared to the closest competitors with 50 A per chip. The clean switching and balanced switching loss between high-side and low-side switches are obtained with an optimized power module layout.
Authors
- Hongbo Zhao (ORCID: https://orcid.org/0000-0002-0043-0030)
- Asger Bjørn Jørgensen (ORCID: https://orcid.org/0000-0003-2171-4531)
- Thore Stig Aunsborg (ORCID: https://orcid.org/0000-0002-9784-3682)
- Benjamin Futtrup Kjærsgaard (ORCID: https://orcid.org/0000-0002-7869-313X)
- Bjørn Rannestad (ORCID: https://orcid.org/0000-0001-7804-6250)
- Nianzun Qi
- Stig Munk‐Nielsen (ORCID: https://orcid.org/0000-0001-9653-5437)
- Michael Møller Bech (ORCID: https://orcid.org/0000-0001-9997-4590)
- Morten Rahr Nielsen (ORCID: https://orcid.org/0000-0002-2160-0465)
- Zhixing Yan (ORCID: https://orcid.org/0000-0003-1677-0408)
- Jannick Kjær Jørgensen (ORCID: https://orcid.org/0000-0003-4151-2494)
- Gao Liu (ORCID: https://orcid.org/0009-0005-2708-7067)
Institutions
- Aalborg University (DK)
Publication Details
- Published
- 2024-11-04
- DOI
- https://doi.org/10.1109/wipda62103.2024.10773070
- Citations
- 3
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63
Funders
- Vestas
- Siemens
- Innovation Fund