Modeling of Ion-Implanted Floating Guard Ring in GaN Diode with Experimental Verification

GaN-on-GaN p-n diode is promising in high-voltage high-power converter applications. Its breakdown voltage (BV) is limited by the edge termination design which is commonly achieved by adding guard rings. In this paper, we study the technology computer-aided-design (TCAD) modeling of nitrogen-ion-implanted guard rings in GaN-on-GaN p-n diode by calibrating to one set of experiments. The same model and parameter sets are then used to predict the BV of another set of unseen experiments. Both experimental data sets fall within $\pm 15 \%$ of the TCAD prediction. Moreover, the peak and trend of BV are predicted correctly by the TCAD simulation.