Investigation on Design Approaches for 4H-SiC Bi-Directional Field Effect Transistors (BiDFETs)
Several designs of Common Drain (CD) Bi-Directional Field Effect Transistors (BiDFETs) were examined to investigate potential wafer area savings when designing monolithically integrated BiDFETs. It was determined that by utilizing the same channel stop within the edge termination, the two individual MOSFET components comprising the BiDFET could be positioned closer together. This approach reduced the total wafer area needed to fabricate the monolithically integrated BiDFET device when compared to the two discrete MOSFET counterpart, even when considering potential yield loss due to the nearly doubled chip size.
Authors
- Robert Kaplar (ORCID: https://orcid.org/0000-0002-7928-9104)
- Jack Flicker (ORCID: https://orcid.org/0000-0002-1223-2154)
- Stephen A. Mancini (ORCID: https://orcid.org/0009-0007-9126-8721)
- Stan Atcitty
- Andrew Binder (ORCID: https://orcid.org/0000-0002-6649-2816)
- Richard Floyd (ORCID: https://orcid.org/0000-0002-1073-9277)
- Woongje Sung (ORCID: https://orcid.org/0000-0003-0960-5973)
- Adam J. Morgan (ORCID: https://orcid.org/0000-0002-8330-4792)
- Seung Yup Jang (ORCID: https://orcid.org/0000-0002-2202-8800)
Institutions
- Albany State University (US)
- University at Albany, State University of New York (US)
- Sandia National Laboratories (US)
- York University (US)
Publication Details
- Published
- 2024-11-04
- DOI
- https://doi.org/10.1109/wipda62103.2024.10773119
- Citations
- 2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- U.S. Department of Energy
- Office of Electricity
- Vehicle Technologies Office