Comparative Study on Single and Multiple JTE Ion Implantations in 1.2kV 4H-SiC PiN Diodes and MOSFETs

This study explores the breakdown performances of 1.2 kV -rated PiN diodes and MOSFETs fabricated with various edge termination structures incorporating Junction Termination Extension (JTE). The research specifically evaluates and compares the effectiveness of Single Implantation (SI) versus Multiple Implantations (MI) in JTE implementation. The optimized SI structure, utilizing aluminum doping, demonstrated breakdown voltages, consistently exceeding 1600 V. On-wafer measurements revealed that devices with SI JTEs, particularly those incorporating Ring Assisted JTE (RA-JTE) and Hybrid-JTE structures, achieved breakdown voltages (BV) up to 1650 V — relatively higher than their MI counterparts. Additionally, MOSFETs with SI JTEs exhibited lower leakage currents compared to those with MI. The findings underscore that SI not only simplifies the fabrication process and reduces costs but also relatively enhances the blocking performance of edge termination structures, positioning it as a preferable choice for JTE-based designs