High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor

Gallium Nitride (GaN) is a wide bandgap semiconductor material known for its exceptional performance in high-temperature and high-voltage environments. This makes GaN a preferred material for field-effect transistors (FETs) used in demanding applications. While GaN FETs are theoretically capable of operating at temperatures exceeding $200^{\circ} \mathrm{C}$, practical applications often limit their maximum junction temperature to around $150^{\circ} \mathrm{C}$, primarily due to packaging limitations, such as those associated with the standard TO-247 package. This paper presents an experimental analysis of the high-temperature performance of GaN FETs, focusing on how elevated temperatures influence various operational parameters. Key areas of investigation include the impact on output characteristics, on-resistance ($\mathrm{R}_{\mathrm{dson}}$), threshold voltage ($\mathrm{V}_{\mathrm{th}}$), transfer characteristics, and gate leakage currents. Furthermore, the study examines potential degradation effects that may result from prolonged operation at elevated temperatures. The insights gained from this study are crucial for advancing the deployment of GaN FETs in applications that demand robust performance under extreme conditions, including automotive, aerospace, and industrial power systems. Ultimately, the findings will contribute to the development of more reliable and efficient power electronics, pushing the boundaries of GaN technology.