Study on Aging Degradation of SRAM Sense Amplifier Based on Device Model
With the continuous influence of external factors in the long-term use of SRAM, the performance degradation of the devices will inevitably occur. Because of its fast response speed, low power consumption, stable performance and other characteristics, the sense amplifier has become the most important part of the peripheral circuit of SRAM and plays an important role in the reliability of SRAM. In order to explore the degradation law of the sense amplifier, the sensitive devices that have the greatest impact on output delay time were determined by simulation analysis based on the sense amplifier of SRAM. Further, multiple sets of simulation results were obtained to fit the mapping function between the threshold voltage variation of the sensitive devices and the delay time through simulation with an orthogonal parameter table. The degradation law is obtained by verifying the accuracy of the function, and the degradation model of the sense amplifier is established to improve the reliability of SRAM.
Authors
- Chenjing Liu (ORCID: https://orcid.org/0000-0002-4738-4705)
- Dongqiang Li
- Sichong Huang (ORCID: https://orcid.org/0000-0002-8615-5534)
- Xiatao Huang (ORCID: https://orcid.org/0000-0002-9943-732X)
- Hao Niu (ORCID: https://orcid.org/0000-0003-0695-8052)
- Ruibao Ren (ORCID: https://orcid.org/0000-0002-9783-0064)
- Yingjie Liu
- Liang Wang (ORCID: https://orcid.org/0000-0001-6223-5962)
- Man Lv
Institutions
- Beijing Microelectronics Technology Institute (CN)
- Ministry of Industry and Information Technology (CN)
Publication Details
- Published
- 2024-10-11
- DOI
- https://doi.org/10.1109/srse63568.2024.10772509
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Research and Development