A Novel Split-Gate GaN Reverse Conduction FinFET Device with Lower Dead-Time Power Losses

Due to its superior properties, the gallium nitride (GaN) Fin Field-Effect Transistor (FinFET) is vital in high-power, high-frequency electronics. However, excessive power dissipation, especially during high-frequency operations, hampers their efficiency. Without the body diode, the high reverse threshold voltage $\left(\mathbf{V}_{R T}\right)$ in GaN FinFET leads to increased dead-time power loss. This study introduces a novel GaN Reverse Conducting FinFET (RC-FinFET) design that decouples forward threshold voltages $\left(\mathbf{V}_{T H}\right)$ and reverse threshold voltages, significantly reducing dead-time power loss. By replacing the traditional top gate with a source field plate (SFP), the RC-FinFET achieves a nearly $30 \%$ reduction in dead-time voltage drop and a $22 \%$ decrease in power loss, as demonstrated by Silvaco 3D mixed-mode TCAD simulations. Furthermore, the study presents a feasible manufacturing process for the proposed device.