Volatile Switching in Flexible Hybrid Halide Perovskite Memristors

Resistive switching property in hybrid organic-inorganic halide perovskites has garnered significant interest in recent years due to their mixed ionic-electronic conductivity, promising advancements in next-generation memristors for synaptic devices in neuromorphic computing applications. Herein, resistive switching characteristics of flexible memristors based on the standard halide perovskite methylammonium lead iodide (MAPbI3) thin films are explored. Notably, the device exhibits volatile threshold resistive switching properties, which can be attributed to voltage-induced ion migration. The tunability of the ON/OFF ratio is investigated for different current compliance (CC) values in the measurement setup, and it is observed to be highest for CC=10 µA among the four compliance values (500 nA, 1 µA, 10 µA, 20 µA) used. The volatile resistive switching property of the flexible halide perovskite memristors strongly suggests their potential in Spiking Neural Networks (SNNs).