A 2 kHz, 34.1 nJ/Conv-Step 5.52-ENOB Asynchronous SAR ADC Using Pseudo N-Type Thin-Film Transistor

This paper presents a 6-bit asynchronous Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) based on N-type Low-Temperature Polysilicon Thin-Film Transistor (LTPS-TFT). The design aims to provide a potentially cost-effective solution by only using N-type TFTs without compromising the ADC performance and die area. The ADC achieves 5.52-ENOB, 3.2 mW with a 2 kHz sampling rate, resulting in a figure of merit (FoM) of 34.1 nJ/conv-step.

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Published
2024-09-15
DOI
https://doi.org/10.1109/ifetc61155.2024.10771866
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.21

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article

A 2 kHz, 34.1 nJ/Conv-Step 5.52-ENOB Asynchronous SAR ADC Using Pseudo N-Type Thin-Film Transistor

Mengzhe Liu, Ting Zhou, Jian Zhao, Jiang Cheng et al.
1 citations
Semiconductor materials and devices
0.21
article

A 2 kHz, 34.1 nJ/Conv-Step 5.52-ENOB Asynchronous SAR ADC Using Pseudo N-Type Thin-Film Transistor

Mengzhe Liu, Ting Zhou, Jian Zhao, Jiang Cheng, Yongfu Li, Yang Zhao
article en
1 citations

Abstract

This paper presents a 6-bit asynchronous Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) based on N-type Low-Temperature Polysilicon Thin-Film Transistor (LTPS-TFT). The design aims to provide a potentially cost-effective solution by only using N-type TFTs without compromising the ADC performance and die area. The ADC achieves 5.52-ENOB, 3.2 mW with a 2 kHz sampling rate, resulting in a figure of merit (FoM) of 34.1 nJ/conv-step.

Shanghai Jiao Tong University (CN), Tsinghua University (CN)
National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 45%
Semiconductor materials and devices
0.21
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