Growth mechanism of Pb<sub>0.9</sub>Cd<sub>0.1</sub>Te: Pb thin films prepared by PVD technique

Abstract The complex surface morphology, defect subsystem and an ab initio model study of Pb 1-x Cd x Te thin films deposited on mica-muscovite substrates by PVD technology are presented in this paper. The thickness, growth mechanisms and uniformity of condensates dependence on deposition regimes were studied by scanning electron microscopy and energy-dispersive x-ray spectroscopy. The deposited films have a granular structure and sizes of crystallites depend on thickness and difference between substrate and condensate crystallographic parameters. The dominance of film growth by the Vollmer-Weber mechanism is demonstrate. Studies of film growth mechanisms allowed us to predict that the formation of grains and the dynamics of their size changes during film growth are caused by complex defects that are associated with Cd atoms in nodes and vacancies of chalcogens.

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Publication Details

Journal
Nano Express
Published
2024-12-01
DOI
https://doi.org/10.1088/2632-959x/ad9abf
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
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article

Growth mechanism of Pb0.9Cd0.1Te: Pb thin films prepared by PVD technique

Тетяна Мазур, Taras Parashchuk, B.P. Naidych, L.I. Nykyruy et al.
Nano Express
Advanced Semiconductor Detectors and Materials
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Growth mechanism of Pb0.9Cd0.1Te: Pb thin films prepared by PVD technique

Тетяна Мазур, Taras Parashchuk, B.P. Naidych, L.I. Nykyruy, R. Yavorskyi, O. Voznyak, O.V. Zamurujeva, Oksana Holovata
article en

Abstract

Abstract The complex surface morphology, defect subsystem and an ab initio model study of Pb 1-x Cd x Te thin films deposited on mica-muscovite substrates by PVD technology are presented in this paper. The thickness, growth mechanisms and uniformity of condensates dependence on deposition regimes were studied by scanning electron microscopy and energy-dispersive x-ray spectroscopy. The deposited films have a granular structure and sizes of crystallites depend on thickness and difference between substrate and condensate crystallographic parameters. The dominance of film growth by the Vollmer-Weber mechanism is demonstrate. Studies of film growth mechanisms allowed us to predict that the formation of grains and the dynamics of their size changes during film growth are caused by complex defects that are associated with Cd atoms in nodes and vacancies of chalcogens.

Nano ExpressVol. 5(4)
University of Agriculture in Krakow (PL), Lesya Ukrainka Volyn National University (UA), Ivano-Frankivsk National Technical University of Oil and Gas (UA), Vasyl Stefanyk Carpathian National University (UA), AGH University of Krakow (PL)
Openalex Percentile: Top 80%
Advanced Semiconductor Detectors and Materials
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