A bright future for micro-LED displays
The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 10<sup>7</sup> nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth, sidewall passivation, efficient photon extraction, and elegant bonding technologies, and promises significant advantages for augmented and virtual reality devices, wearables, and next-generation consumer electronics.
Authors
- Vineeth Kumar Bandari (ORCID: https://orcid.org/0000-0003-2962-5226)
- Oliver G. Schmidt (ORCID: https://orcid.org/0000-0001-9503-8367)
Institutions
- California NanoSystems Institute (US)
- Chemnitz University of Technology (DE)
Publication Details
- Journal
- Light Science & Applications
- Published
- 2024-12-06
- DOI
- https://doi.org/10.1038/s41377-024-01683-z
- Citations
- 28
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 8.70