Modeling and optimization of photonic integrated Silicon-LiNbO₃ hybrid interferometer for E-S-C-L wavelength band

Abstract The Silicon on Insulator (SOI) is a potential technology for thin-film optical waveguide, enabling the design of optical interconnects, including modulators and interferometers. The manuscript presents the broadband modulator for phase and intensity modulation. The nanoscale optimized interferometric modulator utilizes Silicon (Si) and Electro-optic material Lithium Niobate (LiNbO 3 ) as the guiding material to work in terahertz regime, without any bends in the structure. Optimization of the structure is validated by the evaluation of the confinement factor at the operational wavelength of 1550 nm using Finite Element Method (FEM) based simulation. To excite the SOI interferometric modulator, an external RF signal with a maximum amplitude of 5 V is used. The hybrid structure of Si and LiNbO 3 -based modulators shows the electro-optic phenomenon caused by nonlinearities, namely the Pockels effect and Kerr effect, which in turn changes the effective mode index, providing π phase shift along with −0.92 dB/cm absorption loss, 117 μm electrode length at V π Volts and 265 nm 3dB optical bandwidth covering the E-S-C-L optical bands. The device footprint calculated is 667 μm 2 , whereas the active region footprint is ∼46.8 μm 2 .