High output InGaN red laser diodes through implementation of AlGaInN interlayer

We examined the effect of AlGaInN interlayer on the performance of red InGaN laser diodes through numerical simulations. The findings indicate a significant rise in output power from 146 mW to 170 mW as well as an improvement in slope efficiency from 0.23 W/A to 0.52 W/A. Additionally, the proposed device exhibits improved gain and radiative current density.

Authors

Muhammad Usman (ORCID: https://orcid.org/0000-0003-3728-082X)
Laraib Mustafa
Shazma Ali (ORCID: https://orcid.org/0000-0001-7960-9158)
Angrej Ali (ORCID: https://orcid.org/0000-0001-5122-511X)
Iqra Anjum
Wagma Hidayat
Jamshad Bashir
Sadia Shakir

Institutions

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (PK)

Publication Details

Published: 2024-12-04
DOI: https://doi.org/10.1117/12.3052373
Primary Topic: GaN-based semiconductor devices and materials
Type: article
Field-Weighted Citation Impact: 0.00

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article

High output InGaN red laser diodes through implementation of AlGaInN interlayer

Muhammad Usman, Laraib Mustafa, Shazma Ali, Angrej Ali et al.

Dec 4, 2024

GaN-based semiconductor devices and materials

article

High output InGaN red laser diodes through implementation of AlGaInN interlayer

Muhammad Usman, Laraib Mustafa, Shazma Ali, Angrej Ali, Iqra Anjum, Wagma Hidayat, Jamshad Bashir, Sadia Shakir

December 4, 2024article en

Abstract

We examined the effect of AlGaInN interlayer on the performance of red InGaN laser diodes through numerical simulations. The findings indicate a significant rise in output power from 146 mW to 170 mW as well as an improvement in slope efficiency from 0.23 W/A to 0.52 W/A. Additionally, the proposed device exhibits improved gain and radiative current density.

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (PK)

Openalex Percentile: Top 87%

GaN-based semiconductor devices and materials

DOI Source OpenAlex

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