Enhancement of the optoelectronic performance of 25 x 25 µm2 InGaN blue micro-LED

The performance and efficiency of 25 μm Indium Gallium Nitride (InGaN) blue micro light emitting diodes (μLEDs) is improved by optimizing electron blocking layer (EBL). The simulation is carried out through APSYS (Advanced Physical Models of Semiconductor Devices). Different μLEDs with various p-AlGaN EBL concentrations and EBL thicknesses were analyzed to discuss the effects of different EBL designs on the internal quantum efficiency (IQE), emission intensity, and output power of InGaN-based μLEDs. Simulation results showed an enhancement in IQE of up to 60% at a current density of 0.8 A/cm2 with an increase in EBL thickness and a decrease in aluminium (Al) concentration. The ideal μLED device is obtained with optimized EBL from different combinations of thicknesses and concentrations of Al in p-AlGaN EBL. Similarly, emission intensity is enhanced 4 times more than the e mission intensity of the reference structure at low current density. The enhanced optical and electrical performance of InGaN-based μLED is due to high carrier transport in the active region, which results in high radiative recombination of electrons and holes and thus high IQE and output power. Therefore, this study is crucial for the design of high-performance InGaN-based μLEDs at low current density.