Indium-flush technique for C-band InAs/InP quantum dots

High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF) method to shorten the emission and improve the optical properties of InAs/InP QDs. By exploiting IF, the full-width at half-maximum of the room-temperature QD photoluminescence spectra is narrowed from 89.2 to 47.9 meV, with a blue shift of 300 nm (from 1824 to 1522 nm). The scanning transmission electron microscopy and electron energy loss spectroscopy results reveal the atomic-level mechanism of the IF method, which uniformly modify the height of InAs/InP QDs in a controlled manner and form distinct Al-rich and In-rich regions. Finally, InAs/InP (001) QD lasers with the IF method have been demonstrated with a low threshold current density per QD layer of 106 A/cm2. We demonstrated both in terms of mechanism model and device performance that the IF method could serve as a robust strategy for the growth of high-performance C-band InAs/InP QD lasers via molecular beam epitaxy.

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Publication Details

Journal
APL Materials
Published
2024-12-01
DOI
https://doi.org/10.1063/5.0239360
Citations
7
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
2.36

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article

Indium-flush technique for C-band InAs/InP quantum dots

Jiajing Yuan, Huiwen Deng, A.J. Seeds, Hui Jia et al.
7 citations
APL Materials
Semiconductor Quantum Structures and Devices
2.36
article

Indium-flush technique for C-band InAs/InP quantum dots

Jiajing Yuan, Huiwen Deng, A.J. Seeds, Hui Jia, Mingchu Tang, Quentin M. Ramasse, Siming Chen, Huiyun Liu, Khalil El Hajraoui, Haotian Zeng, Calum Dear, Jae‐Seong Park, Yaonan Hou, Junjie Yang, Qiang Li
article en
7 citations

Abstract

High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF) method to shorten the emission and improve the optical properties of InAs/InP QDs. By exploiting IF, the full-width at half-maximum of the room-temperature QD photoluminescence spectra is narrowed from 89.2 to 47.9 meV, with a blue shift of 300 nm (from 1824 to 1522 nm). The scanning transmission electron microscopy and electron energy loss spectroscopy results reveal the atomic-level mechanism of the IF method, which uniformly modify the height of InAs/InP QDs in a controlled manner and form distinct Al-rich and In-rich regions. Finally, InAs/InP (001) QD lasers with the IF method have been demonstrated with a low threshold current density per QD layer of 106 A/cm2. We demonstrated both in terms of mechanism model and device performance that the IF method could serve as a robust strategy for the growth of high-performance C-band InAs/InP QD lasers via molecular beam epitaxy.

APL MaterialsVol. 12(12)
University of Leeds (GB), Swansea University (GB), Sci-Tech Daresbury (GB), University College London (GB), University of York (GB), Cardiff University (GB)
Engineering and Physical Sciences Research Council
Affordable and clean energy
Openalex Percentile: Top 11%
Semiconductor Quantum Structures and Devices
2.36
DOIOpen Access PDFOpenAlex
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