Analytical behavior of Extended Source F-type Nanowire Field-Effect Transistors using Non-Equilibrium Green’s Function-based pH Sensor

This paper presents the design and analysis of a non-ideal pH sensor on an Extended Source F-type Nanowire Field-Effect Transistor (ESF-NWFET) for advanced nanoscale electronic applications. The ESF-NWFET structure exhibits a unique configuration with extended source region characteristics, improving device performance. The dimensions of the ESF-NWFET are designed to extend up to 35 and 11 nm in the X and Y directions, respectively. The gate terminals have a length of 10nm and a width of 1nm, comprising Aluminum (Al) electrodes with a work function (Φ) of 4.3 eV. A highly n-type doped Long-Channel Buried Gate (LBG) material is integrated from the G1 oxide to the bottom of the device, with a confined thickness of 1nm to optimize carrier flow. The Wide Buried Gate (WBG) material has a width of 1.5 nm, ensuring enhanced device performance. The insulating material utilized is Hafnium dioxide (HfO2), with a width of 3.5 nm. The analysis and simulation of the ESF-NWFET structure are conducted using the commercial tool “ATLAS” from Silvaco, employing the Schrodinger and Poisson equations for eigenenergy and function predictions. Quantum transport analysis uses the Non-Equilibrium Green’s Function (NEGF) model, considering electron penetration up to 0.6 nm. The threshold voltage is 1V and 0.7 V for Sio2 and Al2O3 respectively. Ion/Ioff is an important factor for sensor and is equal to 107 and 1010 for SiO2 and Al2O3 dielectric.