A Unified Compact Model for Full-CMOS-Based Hybrid SET–FET Circuits

The proposed work intends to investigate the cryogenic operation of gate all-around nanowire field-effect transistors (GAA NWFETs) for quantum conduction modes across various temperatures. Results show distinctive quantum oscillations (QOs) in NWFETs at temperatures as high as 23 K, gradually transitioning to classical conduction for temperatures above 23 K. Augmentations to the berkeley short-channel IGFET model (BSIM)-common multi-gate (CMG) compact model proposed in this work capture this transition, facilitating the design of full-CMOS-based cryogenic hybrid single-electron transistor (SET)–FET circuits. These circuits offer the potential for scalability and integration of classical and quantum electronics, enabling the design of advanced co-integrated quantum technologies. The proposed source follower-based hybrid circuit is significantly more efficient than traditional circuits in amplifying weak quantum signals generated by the NWFET operating in quantum mode.