Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”
Presents corrections to the paper, (Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”).
Authors
- Chengchang Zhang (ORCID: https://orcid.org/0000-0001-6313-344X)
- Jun Ying (ORCID: https://orcid.org/0009-0003-0050-7039)
- Guangyu Wang (ORCID: https://orcid.org/0009-0000-3229-1795)
- Zhi Jiang (ORCID: https://orcid.org/0000-0003-2783-4155)
- Yu Pang (ORCID: https://orcid.org/0009-0008-6671-0482)
- Jiajia Du (ORCID: https://orcid.org/0009-0000-9446-0478)
- Enpu Wang (ORCID: https://orcid.org/0009-0005-3852-8868)
Institutions
- Chongqing University of Posts and Telecommunications (CN)
- University of Aveiro (PT)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1109/ted.2024.3494760
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00