Development of an Optical Library for Coevaporated CdSe<i> <sub>x</sub> </i>Te<sub>1−</sub> <i> <sub>x</sub> </i>
The conversion efficiency of CdTe solar cells may be improved by bandgap engineering, i.e., changing the bandgap value through the addition of Se in the absorber. The Se alloying enables a short-circuit current density improvement, as it leads to a bandgap energy value decrease. Furthermore, it has been associated with increased minority carrier lifetimes, assuring high open-circuit voltage values. An Se gradient profile control can further optimize the solar cell performance. Thus, an optical model baseline of the CdSe<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><sub>x</sub></i>Te<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−</sub><italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><sub>x</sub></i> (CST) compound was developed. Spectroscopic ellipsometry measurements were conducted to accurately extract the optical constants of ten CST layers deposited through coevaporation with <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> varying from 0 to 1. Using the measured dielectric function spectra from the discrete CST layers with varying <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i>, and considering the composition-induced shift in the critical point energies, an energy-shift model was employed to develop the accurate optical library for the CST compound for any <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> value to provide data for future modeling and optimization. The library accuracy was validated through optical simulations of the quantum efficiency of a graded CST solar cell using the finite-difference time-domain method by replicating the Se profile in the absorber layer measured through secondary ion mass spectrometry.
Authors
- António J. N. Oliveira (ORCID: https://orcid.org/0000-0002-6370-9119)
- William N. Shafarman (ORCID: https://orcid.org/0000-0002-8937-4775)
- Pedro M. P. Salomé (ORCID: https://orcid.org/0000-0002-1050-2958)
- Kevin D. Dobson (ORCID: https://orcid.org/0000-0001-9482-477X)
- M. R. Correia (ORCID: https://orcid.org/0000-0003-3781-0085)
- Jennifer Passos Teixeira (ORCID: https://orcid.org/0000-0002-3155-6832)
- Bert N. La Du (ORCID: https://orcid.org/0009-0005-3448-9232)
Institutions
- International Iberian Nanotechnology Laboratory (PT)
- University of Aveiro (PT)
- University of Delaware (US)
Publication Details
- Journal
- IEEE Journal of Photovoltaics
- Published
- 2024-12-04
- DOI
- https://doi.org/10.1109/jphotov.2024.3507079
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- U.S. Department of Energy