Design and Verification of a GaN-Based, Single Stage, Grid-Connected Three-Phase PV Inverter

This research presents the development of a three-phase GaN-based photovoltaic (PV) inverter, focusing on the feasibility, reliability, and efficiency of gallium nitride (GaN) technology in solar applications. The study systematically explores the use of GaN field-effect transistors (FETs), particularly in enhancing the efficiency and power density of PV systems. A promising inverter topology was identified and extensively analyzed through comprehensive experiments and design optimizations, resulting in a prototype that achieved a remarkable peak efficiency of 96%. Key aspects of the research included performance benchmarking of GaN FETs, design and testing of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LCL</i> filters for grid connection, PCB design considerations for 3-phase inverters, and thorough evaluation of the inverter's performance in terms of power losses, efficiency, and thermal capability. The successful construction and testing of the inverter prototype, despite laboratory constraints, not only demonstrates the viability of GaN over traditional silicon-based inverters but also significantly contributes to advancing renewable energy technologies, paving the way for more efficient and sustainable power systems.