Numerical Studies of I-V Characteristics in Resonant Tunneling Diodes: A Survey of Convergence

Resonant tunneling diodes (RTDs) exhibit a distinctive characteristic known as negative resistance. Accurately calculating the tunneling bias energy is indispensable for the design of quantum devices. This paper conducts a thorough investigation into the current-voltage (I-V) characteristics of RTDs utilizing various numerical methods. Through a series of numerical experiments, we verified that the transfer matrix method ensures robust convergence in I-V curves and proficiently determines the tunneling bias for energy potential functions with discontinuities. Our numerical analysis underscores the significant impact of variations in effective mass on I-V curves, emphasizing the need to consider this effect. Furthermore, we observe that increasing the doping concentration results in a reduction in tunneling bias and an enhancement in peak current. Leveraging the unique features of the I-V curve, we employ shallow neural networks to accurately fit the I-V curves, yielding satisfactory results with limited data.