Influence of Na : Ga ratios under the flux-excess aid on GaN crystal growth using the Na-flux LPE method
In the flux-excess assisted growth of GaN crystals, the effect of different Na : Ga molar ratios on crystal growth was investigated. A Na : Ga molar ratio of 70 : 30 is more conducive to the growth of high-quality GaN crystals.
Authors
- Ronglin Pan
- Zhenrong Li (ORCID: https://orcid.org/0000-0001-5234-3644)
- Ziyou Wang (ORCID: https://orcid.org/0009-0005-2487-1569)
- Ming Ma (ORCID: https://orcid.org/0000-0001-5249-8865)
- Gemeng Huang (ORCID: https://orcid.org/0000-0001-9269-6049)
- Mingbin Zhou (ORCID: https://orcid.org/0000-0002-8973-032X)
- Song Xia (ORCID: https://orcid.org/0000-0002-1962-4273)
- Chen Yang (ORCID: https://orcid.org/0000-0002-3009-0882)
- Shiji Fan (ORCID: https://orcid.org/0000-0003-2177-8260)
Institutions
- Jiangxi Science and Technology Normal University (CN)
- Xi'an Jiaotong University (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2024-12-04
- DOI
- https://doi.org/10.1039/d4ce00871e
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- Key Research and Development Program of Jiangxi Province
- National Key Research and Development Program of China