Dielectric characteristics of iridium substituted Co0.05-xTi0.95O2 dilute magnetic semiconductors for electrical device applications

In the current study, a cost effective solid-state method have been used to prepare iridium (Ir) substituted and cobalt doped titanium dioxide (TiO 2 ) dilute magnetic semiconductors (DMS) materials {i.e.; Ir x Co 0.05-x Ti 0.95 O 2 ; 0.00 ≤ x ≤ 0.05 DMS}. The impact of Ir substitution on structural, optical and dielectric properties for the prepared Ir x Co 0.05-x Ti 0.95 O 2 ; 0.00 ≤ x ≤ 0.05 DMS samples have been investigated using X-ray diffractometer, ultraviolet-visible spectroscopy and LCR (inductor, capacitor and resistor) meter, respectively. The structural analysis confirms the tetragonal rutile phase formation with space group p42/mnm-136, while the values of band gap energy increase with increasing Ir concentrations in prepared DMS materials and band gap value approaches the band gap energy of void band gap materials for large applications. The dielectric constant and tangent loss have been studied as a mapping of frequency (20 Hz - 20 MHz) at room temperature. Both the dielectric constant and tangent loss linearly decrease with increase in applied frequency and become stable at high frequency values, therefore, these DMS materials could be beneficial for storage and electrical device applications. • Cost effective solid state method have been used to prepare iridium (Ir) substituted and cobalt doped titanium dioxide (TiO 2 ) dilute magnetic semiconductors (DMS) materials {i.e.; Ir x Co 0.05-x Ti 0.95 O 2 ; 0.00 ≤ x ≤ 0.05}. • The impact of Ir substitution on structural, optical and dielectric properties of the prepared Ir x Co 0.05-x Ti 0.95 O 2 ; 0.00 ≤ x ≤ 0.05 samples have been investigated. • Structural analysis confirms the tetragonal rutile phase formation with space group p42/mnm-136 while the values of band gap energy increase with increasing Ir concentrations in prepared DMS materials. • The dielectric constant and tangent loss have been studied as a mapping of frequency (20 Hz - 20 MHz) at room temperature. • Both the dielectric constant and tangent loss linearly decrease with increase in applied frequency and become stable at high frequency values. • The overall findings endorse that these DMS materials could be beneficial for storage and electrical device applications.