Etching properties of PIN-PMN-PT and its integration in electro-optic phase modulators

We investigate the etching characteristics of PIN-PMN-PT crystals, exploring various wet etching solutions, reactive ion etching gases, and ion beam etching. The etch rate and surface roughness are systematically measured for each method. A process flow to obtain PIN-PMN-PT thin films is described and performed to later build a single-mode rib waveguide. An integrated electro-optic phase modulator is fabricated by depositing electrodes on the sides of the waveguides. The electro-optic coefficient implied in our phase modulators is r 51 / r 42 . The performances are tested achieving a V π L of 19.2 V·cm.