A Sunlight-Interference-Immune Artificial Optoelectronic Synaptic Device for Visual Perception and Memory
The artificial photoelectric synaptic devices integrating optical signal response and data processing functions enable the simulation of the human visual system. However, the optical modulation behavior of photoelectronic synaptic devices is susceptible to interference from sunlight background, significantly hindering their applications in optical modulation. To address this issue, a Ni/AlYN/ITO structure for sunlight-interference-free artificial synaptic memristor was designed and fabricated, and the application in photoelectric modulation was demonstrated. Solar-blind ultraviolet light with low background noise and high security is introduced as the optical stimuli signal. Various biological synaptic functions, including short-term and long-term synaptic plasticity, have been successfully simulated under the modulation of optical and electrical signals. Furthermore, it emulates the human visual system's perception and memory functions, exhibiting notable memory retention (over 300 s) and capacity (up to 5.6 times after 5 cycles). Notably, the device's output current remains unaffected by the optical signal interference. This artificial photoelectric synaptic device not only extends the potential for human visual perception in the solar-blind ultraviolet region, but also facilitates the integration of solar-blind optical communication and brain-inspired computing. This advancement is expected to enable information reception, transmission, and processing resistant to visible light interference, thereby creating and boosting applications in secure optical communication.
Authors
- Wenwen Lin
- Qichang Hu (ORCID: https://orcid.org/0000-0003-2672-5862)
- Xiangzeng Kong (ORCID: https://orcid.org/0000-0001-8492-1349)
- Jiale Huang (ORCID: https://orcid.org/0000-0002-5743-0461)
- Yanqiu Zhang (ORCID: https://orcid.org/0000-0001-7189-4214)
- Xiong Chen (ORCID: https://orcid.org/0000-0003-2878-7522)
- Xiaolong Yang (ORCID: https://orcid.org/0000-0002-3249-483X)
- Jun Lin
Institutions
- Chinese Academy of Sciences (CN)
- Fujian Jiangxia University (CN)
- Fujian Institute of Research on the Structure of Matter (CN)
- Ningbo Institute of Industrial Technology (CN)
- Fujian Agriculture and Forestry University (CN)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2024-12-04
- DOI
- https://doi.org/10.1021/acsami.4c15822
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Natural Science Foundation of Fujian Province
- National Key Research and Development Program of China