An On‐Chip Second‐Order Elastic Topological Insulator for Demultiplexing Out‐of‐Plane and In‐Plane Corner Modes

Second-order elastic topological insulators (SETIs) with tightly localized corner states present a promising avenue for manipulating elastic waves in lower dimensions. However, existing SETIs typically support corner states of only a single mode, either out-of-plane or in-plane. In this work, an on-chip SETI that simultaneously hosts both high-frequency out-of-plane and in-plane corner states at ≈0.2 MHz is introduced. The presence of these corner states is experimentally validated, and their selective excitation by tuning the excitation frequency is demonstrated. This capability to demultiplex out-of-plane and in-plane corner states positions the SETI as a potential platform for developing multifunctional elastic devices and enhancing the communication capacities of elastic waves. Furthermore, due to its structural simplicity, the SETI can be readily scaled and integrated into on-chip elastic circuits, making it suitable for applications in micro-electromechanical systems.

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Publication Details

Journal
Advanced Science
Published
2024-12-04
DOI
https://doi.org/10.1002/advs.202411398
Citations
7
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
2.36

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article

An On‐Chip Second‐Order Elastic Topological Insulator for Demultiplexing Out‐of‐Plane and In‐Plane Corner Modes

Yafeng Chen, Jie Zhu, Lei Fan, Zhongqing Su
7 citations
Advanced Science
Topological Materials and Phenomena
2.36
article

An On‐Chip Second‐Order Elastic Topological Insulator for Demultiplexing Out‐of‐Plane and In‐Plane Corner Modes

Yafeng Chen, Jie Zhu, Lei Fan, Zhongqing Su
article en
7 citations

Abstract

Second-order elastic topological insulators (SETIs) with tightly localized corner states present a promising avenue for manipulating elastic waves in lower dimensions. However, existing SETIs typically support corner states of only a single mode, either out-of-plane or in-plane. In this work, an on-chip SETI that simultaneously hosts both high-frequency out-of-plane and in-plane corner states at ≈0.2 MHz is introduced. The presence of these corner states is experimentally validated, and their selective excitation by tuning the excitation frequency is demonstrated. This capability to demultiplex out-of-plane and in-plane corner states positions the SETI as a potential platform for developing multifunctional elastic devices and enhancing the communication capacities of elastic waves. Furthermore, due to its structural simplicity, the SETI can be readily scaled and integrated into on-chip elastic circuits, making it suitable for applications in micro-electromechanical systems.

Advanced ScienceVol. 12(4)
Tongji University (CN), Hong Kong Polytechnic University (HK), Institute of Acoustics (CN)
National Natural Science Foundation of China, Innovation and Technology Commission, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 11%
Topological Materials and Phenomena
2.36
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