Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals
Hafnium oxide (HfO<sub>2</sub>)-based devices have been extensively evaluated for high-speed and low-power memory applications. Here, the influence of aluminum (Al) and lanthanum (La) co-doping HfO<sub>2</sub> thin films on the ferroelectric characteristics of hafnium-based devices is investigated. Among devices with different La/Al ratios, the Al and La co-doped hafnium oxide (HfAlAO) device with 4.2% Al and 2.17% La exhibited the excellent remanent polarization and thermostability. Meanwhile, first principal analyses verified that hafnium-based thin films with 4.2% Al and 2.17% La promoted the formation of the o-phase against the paraelectric phase, providing theoretical support for supporting experimental results. Furthermore, a vertical ferroelectric HfO<sub>2</sub> memory based on 3D macaroni architecture is reported. The devices show excellent ferroelectric characteristics of 22 µC cm<sup>-2</sup> under 4.5 MV cm<sup>-1</sup> and minimal coercive field of ≈1.6 V. In addition, the devices exhibit great memory performance, including the response speed of device can achieve 20 ns and endurance characteristic can achieve 10<sup>10</sup> cycles.
Authors
- Jiajie Yu
- Jialin Meng (ORCID: https://orcid.org/0000-0002-4622-833X)
- Hao Zhu (ORCID: https://orcid.org/0000-0003-3890-6871)
- Zhenhai Li (ORCID: https://orcid.org/0000-0001-9878-3274)
- David Wei Zhang
- Qingqing Sun (ORCID: https://orcid.org/0000-0002-6019-9272)
- Shiyou Chen (ORCID: https://orcid.org/0000-0002-4039-8549)
- Tianyu Wang (ORCID: https://orcid.org/0000-0001-8114-3481)
- Kang Xu (ORCID: https://orcid.org/0000-0002-6946-8635)
- Lin Chen (ORCID: https://orcid.org/0000-0002-7145-7564)
- Yongkai Liu (ORCID: https://orcid.org/0000-0002-3704-4897)
- Sen Tang (ORCID: https://orcid.org/0009-0001-1945-530X)
- Ruihong Yuan (ORCID: https://orcid.org/0009-0003-7846-6951)
Institutions
- Anhui University (CN)
- Shandong University (CN)
- Fudan University (CN)
- Shanghai Innovative Research Center of Traditional Chinese Medicine (CN)
- Shanghai Fudan Microelectronics (China) (CN)
- State Key Laboratory of Crystal Materials
Publication Details
- Journal
- Advanced Science
- Published
- 2024-12-04
- DOI
- https://doi.org/10.1002/advs.202410765
- Citations
- 8
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.67
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Science and Technology Commission of Shanghai Municipality
- Natural Science Foundation of Shandong Province
- National Key Research and Development Program of China