Effect of integration time on the performance parameters of InGaAs detectors
Shortwave infrared imaging has the characteristics of high recognition and all-weather adaptation. Consequently, InGaAs short-wave infrared (SWIR) detectors find extensive applications in military and civilian fields, which imposes higher performance demands on InGaAs SWIR detectors. To optimize the performance and effectiveness of InGaAs SWIR detectors, this study delves into the fluctuation patterns of detectivity, responsivity, and dynamic range concerning integration time. Furthermore, it examines the outcomes of these parameters at various integration times. It is observed that the performance of InGaAs SWIR detectors changes at different integration times, and each parameter exhibits specific variation patterns with integration time.
Authors
- Jianting Lu (ORCID: https://orcid.org/0000-0001-7201-0396)
- Shaohua Yang (ORCID: https://orcid.org/0000-0003-4000-1748)
- Yuebo Liu (ORCID: https://orcid.org/0000-0002-2026-2724)
- Xichun Luo (ORCID: https://orcid.org/0000-0002-5024-7058)
- Zhipeng Wei (ORCID: https://orcid.org/0000-0002-0492-9365)
- Yichi Zhang (ORCID: https://orcid.org/0009-0005-8671-6302)
Institutions
- Changchun University of Science and Technology (CN)
- China Electronic Product Reliability and Environmental Test Institute (CN)
Publication Details
- Published
- 2024-12-04
- DOI
- https://doi.org/10.1117/12.3032585
- Citations
- 1
- Primary Topic
- CCD and CMOS Imaging Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.21