The damage effects and analysis of nanosecond pulse laser irradiation on triple junction GsAs solar cells

In order to study the damage effects of triple junction GsAs solar cell under the high energy pulse laser radiation, a irradiation effects experiment utilizing a 1064nm nanosecond pulse laser as the intense light source was carried out. When the solar cell was irradiated by a nanosecond pulse laser with a single pulse energy density of 0.3J/cm² , the maximum output power of the solar cell decreases with the accumulated pulse energy increases. During the experiment, it was found that the phenomenon of nanosecond laser irradiation on triple junction gallium arsenide solar cells was significantly different from that of continuous wave（CW）laser irradiation. Firstly, viewing from outside, there’s almost no significant changes were observed in the appearance of solar cells before and after the pulse laser irradiation. But the CW laser caused significant changes in the morphology of solar cells, even bursting. Secondly, by summarizing the I-V curves measured before and after the pulse laser irradiation, the open circuit voltage and fill factor were obviously decreased after the irradiation, and the short-circuit current remains almost unchanged before the solar cell is 100% no-output. This is different from the phenomenon reported in literature that CW laser irradiation induced an increase on short-circuit current in triple junction GaAs solar cell. Based on this phenomenon, the damage mechanism of nanosecond pulse laser on triple junction GaAs solar cells was analyzed from the aspects of volt ampere characteristics, equivalent circuit and damage of sub battery.