Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.

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Publication Details

Journal
Nature Communications
Published
2024-12-03
DOI
https://doi.org/10.1038/s41467-024-54873-z
Citations
20
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
4.17

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article

Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

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20 citations
Nature Communications
Photonic and Optical Devices
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article

Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

Davide Spirito, A. Chelnokov, Daniel Schwarz, Omar Concepción, Lukas Seidel, Z. Ikonić, Teren Liu, Dan Buca, Vivien Kiyek, Michael Oehme, Jeremy Witzens, Detlev Grützmacher, Bahareh Marzban, Jörg Schulze, Giovanni Capellini, Aimen Benkhelifa, Jean-Michel Hartmann
article en
20 citations

Abstract

Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.

Nature CommunicationsVol. 15(1)
University of Stuttgart (DE), Roma Tre University (IT), University of Leeds (GB), Forschungszentrum Jülich (DE), Friedrich-Alexander-Universität Erlangen-Nürnberg (DE), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Basque Center for Materials, Applications and Nanostructures (ES), CEA Grenoble (FR), ETH Zurich (CH), Laboratoire d'Électronique des Technologies de l'Information (FR), RWTH Aachen University (DE), Université Grenoble Alpes (FR), Leibniz Institute for High Performance Microelectronics (DE)
European Commission, Deutsche Forschungsgemeinschaft
Affordable and clean energy
Openalex Percentile: Top 5%
Photonic and Optical Devices
4.17
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