Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction
We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that locally illuminates the ungated region at 0.4 μW. When Vg = 0 V, Light B doubles ISG for Light A. At Vg = 87 mV, ISG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When Vg = 165 mV, ISG is induced only for the illumination of Light A alone, like A∩B̄.
Authors
- Takuya Kawazu (ORCID: https://orcid.org/0000-0001-8081-4167)
Institutions
- National Institute for Materials Science (JP)
Publication Details
- Journal
- AIP Advances
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1063/5.0233346
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.34