Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction

We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that locally illuminates the ungated region at 0.4 μW. When Vg = 0 V, Light B doubles ISG for Light A. At Vg = 87 mV, ISG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When Vg = 165 mV, ISG is induced only for the illumination of Light A alone, like A∩B̄.

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Publication Details

Journal
AIP Advances
Published
2024-12-01
DOI
https://doi.org/10.1063/5.0233346
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.34
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article

Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction

Takuya Kawazu
1 citations
AIP Advances
Semiconductor Quantum Structures and Devices
0.34
article

Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction

Takuya Kawazu
article en
1 citations

Abstract

We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that locally illuminates the ungated region at 0.4 μW. When Vg = 0 V, Light B doubles ISG for Light A. At Vg = 87 mV, ISG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When Vg = 165 mV, ISG is induced only for the illumination of Light A alone, like A∩B̄.

AIP AdvancesVol. 14(12)
National Institute for Materials Science (JP)
Openalex Percentile: Top 38%
Semiconductor Quantum Structures and Devices
0.34
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