Optical-transition parameters of the silicon <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>T</mml:mi></mml:math> center

The silicon T center's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T center's spin-selective optical transitions remain undetermined or ambiguous in the literature. In this paper, we present a Hamiltonian of the T center TX state and determine key parameters of the optical transition from ${\mathrm{T}}_{0}$ to ${\mathrm{TX}}_{0}$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T center emission. As a result, we provide a model of the T center's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies.

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Institutions

Publication Details

Journal
Physical Review Applied
Published
2024-12-03
DOI
https://doi.org/10.1103/physrevapplied.22.064014
Citations
13
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
4.39

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article

Optical-transition parameters of the silicon <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>T</mml:mi></mml:math> center

Nicholas Brunelle, Öney O. Soykal, Yihuang Xiong, Amirhossein AlizadehKhaledi et al.
13 citations
Physical Review Applied
Semiconductor Quantum Structures and Devices
4.39
article

Optical-transition parameters of the silicon <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>T</mml:mi></mml:math> center

Nicholas Brunelle, Öney O. Soykal, Yihuang Xiong, Amirhossein AlizadehKhaledi, Geoffroy Hautier, Moein Kazemi, Joshua Kanaganayagam, Mehdi Keshavarz, Chloe Clear, Camille Chartrand, Daniel Higginbottom, M. L. W. Thewalt, Valentin Karassiouk, Austin Woolverton, Louis Alaerts, Stephanie Simmons, Sara Hosseini
article en
13 citations

Abstract

The silicon T center's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T center's spin-selective optical transitions remain undetermined or ambiguous in the literature. In this paper, we present a Hamiltonian of the T center TX state and determine key parameters of the optical transition from ${\mathrm{T}}_{0}$ to ${\mathrm{TX}}_{0}$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T center emission. As a result, we provide a model of the T center's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies.

Physical Review AppliedVol. 22(6)
Dartmouth College (US), Simon Fraser University (CA), Coquitlam College (CA), Photonic Systems (United States) (US), Photonic Science (United Kingdom) (GB), Dartmouth Hospital (GB), UCLouvain (BE)
U.S. Department of Energy, Canadian Institute for Advanced Research, Canada Foundation for Innovation, Canada Research Chairs, Office of Science, Natural Sciences and Engineering Research Council of Canada, British Columbia Knowledge Development Fund, Basic Energy Sciences
Openalex Percentile: Top 5%
Semiconductor Quantum Structures and Devices
4.39
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