Low Power Linear Operational Transconductance Amplifier

The demand for transconductors that can provide linear performance under supply voltages below 0.5 V is increasing, particularly for low-power applications such as in biomedical fields. This work presents a flipped voltage follower (FVF)-based bulk-driven (BD) double diffusor double differential pair (D4P) transconductor, designed using 0.18 μm technology. The proposed design effectively operates at ±0.5 V, with a linear range of 0.2 V, a transconductance (Gm) of 1.07 μS, power dissipation of 0.365 μW, a gain of 27 dB, and a gain-bandwidth product of 27 kHz. Further analysis shows that the proposed transconductor has figure of merit values FOM1 and FOM2 of 240 and 38.06, respectively, with a linearity enhancement factor of 1.7, indicating promising performance. Monte Carlo analysis demonstrates that the Gm, gain, and total harmonic distortion have mean values of 1.48 μS, 26.13 dB, and −48.45 dB, respectively, which are close to the nominal values. The total layout area of the transconductor is 20204.54 μm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, providing a compact yet efficient design for low-voltage applications.

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Published
2024-10-15
DOI
https://doi.org/10.1109/icses63445.2024.10763255
Citations
1
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
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article

Low Power Linear Operational Transconductance Amplifier

Gautam Rana, Ravi Kumar
1 citations
Analog and Mixed-Signal Circuit Design
0.18
article

Low Power Linear Operational Transconductance Amplifier

Gautam Rana, Ravi Kumar
article en
1 citations

Abstract

The demand for transconductors that can provide linear performance under supply voltages below 0.5 V is increasing, particularly for low-power applications such as in biomedical fields. This work presents a flipped voltage follower (FVF)-based bulk-driven (BD) double diffusor double differential pair (D4P) transconductor, designed using 0.18 μm technology. The proposed design effectively operates at ±0.5 V, with a linear range of 0.2 V, a transconductance (Gm) of 1.07 μS, power dissipation of 0.365 μW, a gain of 27 dB, and a gain-bandwidth product of 27 kHz. Further analysis shows that the proposed transconductor has figure of merit values FOM1 and FOM2 of 240 and 38.06, respectively, with a linearity enhancement factor of 1.7, indicating promising performance. Monte Carlo analysis demonstrates that the Gm, gain, and total harmonic distortion have mean values of 1.48 μS, 26.13 dB, and −48.45 dB, respectively, which are close to the nominal values. The total layout area of the transconductor is 20204.54 μm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, providing a compact yet efficient design for low-voltage applications.

Chitkara University (IN)
Affordable and clean energy
Openalex Percentile: Top 50%
Analog and Mixed-Signal Circuit Design
0.18
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