A Monolithic GaN shift register with reduced power consumption

Gallium Nitride (GaN) semiconductor technology is currently undergoing continuous development due to its promising electrical and physical characteristics, mainly for high power switching applications. As a result, there is a growing demand for circuits implemented in this technology, necessitating monolithic implementation to leverage integration advantages. The production of integrated devices in GaN technology requires the development of auxiliary circuits, both digital and analog, to accompany the power circuits. One limitation of this technology is the unavailability of the P-type transistor adopted in traditional analog and digital design. In this paper basic digital circuits have been designed with the aim to realize digital memory circuits for storing data. The main objective is to limit the whole power consumption with ad-hoc solutions. Digital and analog basic circuits have been examined and optimized with regard to power consumption-efficiency and robustness to power supply and temperature variations. A new shift register topology designed in GaN monolithic technology of STMicroelectronics has been designed and simulated.