Engineering UGR-VCMTCF RRAM Model for Adjusting to TiN/Ti/HfO₂/W Devices

RRAMs operate based on resistive switching phenomena within several structuring technologies, enabling reversible switching between high and low resistance states with electrical stimuli. UGR-VCMTCF model developed at Granada University, which is based on the Stanford-PKU model, extends its flexibility. In this paper, we improve this model to adjust the switching behavior to a real $15 \times 15 \mu \mathbf{m}^{2} \mathbf{T i N} / \mathbf{T i} / \mathbf{H f O}_{2} / \mathbf{W}$ RRAM sample device from IMB CNM by adding some conditions (on circuit level as well as in the model itself). Our improvements fit the nominal characteristics of the device, introduces more flexibility in some parameters and modifies the variability scheme. The comparison between the empirical and the simulation outcomes demonstrate a better match.