Doping of porous activated carbon with Er, a metal with a high electronic states density

The effect of doping porous carbon material (PCM) with erbium, as a metal with a high density of electronic states, on the electrochemical properties of PCM was investigated. It was established that the optimal concentration of introduced erbium 0.2% leads to a significant increase in specific capacity for the devices formed on the basis of erbium-doped carbon material. And the doping of PCM with both erbium (0.2 wt.%) and copper (0.1 wt.%) results not only in the specific capacity increase but also lowers total system impedance.