The transmission modulation effect of patterns on the light extraction of ultraviolet-C light emitting diodes

The AlGaN-based ultraviolet-C light emitting diodes (UVC LEDs) exhibit low light extraction efficiency (LEE), and patterning substrate surfaces is considered an effective solution. In this work, a simplified model based on the light extraction process of typical flip-chip UVC LEDs is proposed, which accelerates the simulations and illustrates the transmission process of patterned substrates more clearly. It is found that, different from the case in InGaN-based visible LEDs, the patterns on the substrate surfaces of UVC LEDs enhance the LEE by modulating the transmittance. The effects of sub-micron patterns are also studied, and the results suggest that the effects of LEE enhancement from different-scaled patterns vary little, unless the scale is decreased below a certain threshold so that the LEE decreases significantly. The results also show that AlN substrates can exhibit a 33% relative LEE enhancement if properly patterned, in contrast to the 18% enhancement in the case of sapphire. The proposed models and the acquired conclusions should be of help in designing UVC LEDs with high efficiency, especially for those on AlN substrates.

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Publication Details

Journal
AIP Advances
Published
2024-12-01
DOI
https://doi.org/10.1063/5.0235281
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.31

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article

The transmission modulation effect of patterns on the light extraction of ultraviolet-C light emitting diodes

Tongjun Yu, Yucheng Tian, Huimin Lu, Hui Wang et al.
1 citations
AIP Advances
GaN-based semiconductor devices and materials
0.31
article

The transmission modulation effect of patterns on the light extraction of ultraviolet-C light emitting diodes

Tongjun Yu, Yucheng Tian, Huimin Lu, Hui Wang, Zhizhong Chen
article en
1 citations

Abstract

The AlGaN-based ultraviolet-C light emitting diodes (UVC LEDs) exhibit low light extraction efficiency (LEE), and patterning substrate surfaces is considered an effective solution. In this work, a simplified model based on the light extraction process of typical flip-chip UVC LEDs is proposed, which accelerates the simulations and illustrates the transmission process of patterned substrates more clearly. It is found that, different from the case in InGaN-based visible LEDs, the patterns on the substrate surfaces of UVC LEDs enhance the LEE by modulating the transmittance. The effects of sub-micron patterns are also studied, and the results suggest that the effects of LEE enhancement from different-scaled patterns vary little, unless the scale is decreased below a certain threshold so that the LEE decreases significantly. The results also show that AlN substrates can exhibit a 33% relative LEE enhancement if properly patterned, in contrast to the 18% enhancement in the case of sapphire. The proposed models and the acquired conclusions should be of help in designing UVC LEDs with high efficiency, especially for those on AlN substrates.

AIP AdvancesVol. 14(12)
Peking University (CN), University of Science and Technology Beijing (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 41%
GaN-based semiconductor devices and materials
0.31
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The transmission modulation effect of patterns on the light extraction of ultraviolet-C light emitting diodes — Tongjun Yu, Yucheng Tian, et al. · AIP Advances (2024) | TGRS Research Map | TGRS