The transmission modulation effect of patterns on the light extraction of ultraviolet-C light emitting diodes
The AlGaN-based ultraviolet-C light emitting diodes (UVC LEDs) exhibit low light extraction efficiency (LEE), and patterning substrate surfaces is considered an effective solution. In this work, a simplified model based on the light extraction process of typical flip-chip UVC LEDs is proposed, which accelerates the simulations and illustrates the transmission process of patterned substrates more clearly. It is found that, different from the case in InGaN-based visible LEDs, the patterns on the substrate surfaces of UVC LEDs enhance the LEE by modulating the transmittance. The effects of sub-micron patterns are also studied, and the results suggest that the effects of LEE enhancement from different-scaled patterns vary little, unless the scale is decreased below a certain threshold so that the LEE decreases significantly. The results also show that AlN substrates can exhibit a 33% relative LEE enhancement if properly patterned, in contrast to the 18% enhancement in the case of sapphire. The proposed models and the acquired conclusions should be of help in designing UVC LEDs with high efficiency, especially for those on AlN substrates.
Authors
- Tongjun Yu (ORCID: https://orcid.org/0000-0001-8595-7351)
- Yucheng Tian (ORCID: https://orcid.org/0000-0002-0114-8918)
- Huimin Lu (ORCID: https://orcid.org/0000-0001-5053-5036)
- Hui Wang (ORCID: https://orcid.org/0000-0002-0593-6380)
- Zhizhong Chen (ORCID: https://orcid.org/0000-0003-3321-2352)
Institutions
- Peking University (CN)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- AIP Advances
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1063/5.0235281
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.31
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China