A Reconfigurable Polarimetric Photodetector Based on the MoS2/PdSe2 Heterostructure with a Charge-Trap Gate Stack

Besides the intensity and wavelength, the ability to analyze the optical polarization of detected light can provide a new degree of freedom for numerous applications, such as object recognition, biomedical applications, environmental monitoring, and remote sensing imaging. However, conventional filter-integrated polarimetric sensing systems require complex optical components and a complicated fabrication process, severely limiting their on-chip miniaturization and functionalities. Herein, the reconfigurable polarimetric photodetection with photovoltaic mode is developed based on a few-layer MoS₂/PdSe₂ heterostructure channel and a charge-trap structure composed of Al₂O₃/HfO₂/Al₂O₃ (AHA)-stacked dielectrics. Because of the remarkable charge-trapping ability of carriers in the AHA stack, the MoS₂/PdSe₂ channel exhibits a high program/erase current ratio of 10⁵ and a memory window exceeding 20 V. Moreover, the photovoltaic mode of the MoS₂/PdSe₂ Schottky diode can be operated and manipulable, resulting in high and distinct responsivities in the visible broadband. Interestingly, the linear polarization of the device can be modulated under program/erase states, enabling the reconfigurable capability of linearly polarized photodetection. This study demonstrates a new prototype heterostructure-based photodetector with the capability of both tunable responsivity and linear polarization, demonstrating great potential application toward reconfigurable photosensing and polarization-resolved imaging applications.