One‐Step Van der Waals Integration of Multi‐Threshold 2D Functional Circuits

Abstract Transition‐metal dichalcogenides (TMDs), as atomically thin semiconductors, have shown immense promise for next‐generation electronics due to their high mobility and potential for creating van der Waals heterostructures. However, precise control of the threshold voltage ( V th ) in field‐effect transistors (FETs) remains a significant challenge, impeding the development of 2D material circuits with tailored electronic functions. Herein, a graphene‐assisted one‐step van der Waals integration technique is presented for fabricating multi‐threshold 2D functional circuits. Graphene's unique property of having a surface without dangling bonds is utilized as an intermediary layer, allowing for the transfer of electrodes with various work functions and high‐ κ dielectric layers onto 2D channel materials in a single step. This technique has successfully produced Al‐gated MoS 2 FETs with a V th of −0.2 V and Au‐gated MoS 2 FETs with a V th of 1.9 V. This precision enables the development of functional devices such as rail‐to‐rail inverters with large noise margins. Furthermore, more complex multi‐threshold 2D circuits are achieved, including basic logic gates (NOT, NAND, NOR), six‐transistor static random‐access memory (6T‐SRAM), and ring oscillators (RO). This work showcases a scalable and effective strategy for threshold voltage engineering in 2D material‐based circuits, paving the way for sophisticated electronic and optoelectronic applications.