Nonreciprocal reflection of mid-infrared light by highly doped InAs at low magnetic fields
We report an experimental observation of room-temperature nonreciprocal reflection of mid-infrared light from planar highly doped InAs surfaces at low magnetic fields ranging from 0.07 T to 0.16 T. Using ellipsometry, we demonstrate that the amplitude ratio and phase shift of reflected light are nonreciprocal in the Voigt configuration. We also demonstrate using Fourier-transform infrared spectroscopy that the nonreciprocal reflectance contrast (the difference in reflectance in opposite directions) increases with the magnitude of the magnetic field for <i>p</i>-polarized light. Our work is a step toward the practical implementation of nonreciprocal thermal emitters and absorbers and applications such as remote magnetic field sensing.
Authors
- Xin Qian (ORCID: https://orcid.org/0000-0002-3198-2014)
- Svetlana V. Boriskina (ORCID: https://orcid.org/0000-0001-6798-8082)
- Simo Pajovic (ORCID: https://orcid.org/0000-0002-7497-3118)
- Yoichiro Tsurimaki (ORCID: https://orcid.org/0000-0001-7700-9175)
- Gang Chen (ORCID: https://orcid.org/0000-0002-3968-8530)
Institutions
- Huazhong University of Science and Technology (CN)
- Stanford University (US)
Publication Details
- Journal
- Optics Express
- Published
- 2024-12-02
- DOI
- https://doi.org/10.1364/oe.544496
- Citations
- 11
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.71
Funders
- National Science Foundation
- Army Research Office